Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers
نویسندگان
چکیده
Top-gated epitaxial-graphene nanoribbon (GNR) field-effect transistors on SiC wafers were fabricated and characterized at room temperature. The devices exhibited extremely high current densities ( 10 000 mA/mm) due to the combined advantages of the one-dimensionality of GNRs and the SiC substrate. These advantages included good heat dissipation as well as the high optical phonon energy of the GNRs and SiC substrate. An analytical model explains the measured family of ID–VDS curves with a pronounced ‘kink’ at a high electric field. The effective carrier mobility as a function of the channel length was extracted from both the ID–VDS modeling and the maximum transconductance from the ID–VGS curve. The effective mobility decreased for small channel lengths (<1 lm), exhibiting ballistic or quasiballistic transport properties. VC 2014 American Vacuum Society. [http://dx.doi.org/10.1116/1.4861379]
منابع مشابه
Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC „0001... for high frequency transistors
Up to two layers of epitaxial graphene have been grown on the Si-face of 2 in. SiC wafers exhibiting room-temperature Hall mobilities up to 2750 cm2 V−1 s−1, measured from ungated, large, 160 200 m2 Hall bars, and up to 4000 cm2 V−1 s−1, from top-gated, small, 1 1.5 m2 Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, followed by an annea...
متن کاملGraphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated ...
متن کاملScalable templated growth of graphene nanoribbons on SiC.
In spite of its excellent electronic properties, the use of graphene in field-effect transistors is not practical at room temperature without modification of its intrinsically semimetallic nature to introduce a bandgap. Quantum confinement effects can create a bandgap in graphene nanoribbons, but existing nanoribbon fabrication methods are slow and often produce disordered edges that compromise...
متن کاملStructural and electronic properties of epitaxial graphene on SiC(0001): A review of growth, characterization, transfer doping and hydrogen intercalation
Graphene, a monoatomic layer of graphite hosts a two-dimensional electron gas system with large electron mobilities which makes it a prospective candidate for future carbon nanodevices. Grown epitaxially on silicon carbide (SiC) wafers, large area graphene samples appear feasible and integration in existing device technology can be envisioned. This article reviews the controlled growth of epita...
متن کاملElectro-oxidized epitaxial graphene channel field-effect transistors with single-walled carbon nanotube thin film gate electrode.
We report the effect of electrochemical oxidation in nitric acid on the electronic properties of epitaxial graphene (EG) grown on silicon carbide substrates; we demonstrate the availability of an additional reaction channel in EG, which is not present in graphite but which facilitates the introduction of the reaction medium into the graphene galleries during electro-oxidation. The device perfor...
متن کامل